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SIEGET 45 BFP520F
NPN Silicon RF Transistor Preliminary data For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V Outstanding Gms = 23 dB Noise Figure F = 0.95 dB For oscillators up to 15 GHz Transition frequency fT = 45 GHz Gold metallization for high reliability 45 GHz fT - Line
TSFP-4
to p v ie w
" !
3 4
XYs
2 1
APs
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFP520F
Maximum Ratings Parameter
Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Ambient temperature Storage temperature TS 107C
Thermal Resistance Junction - soldering point1) RthJS
1For calculation of R thJA please refer to Application Note Thermal Resistance
SIEGET
45 - Line
d ir e c tio n o f u n r e e lin g
Marking APs 1=B
Pin Configuration 2=E 3=C 4=E
Symbol VCEO VCBO VEBO IC IB Ptot Tj TA Tstg
Value 2.5 10 1 40 4 100 150 -65 ... 150 -65 ... 150
430
1

Package TSFP-4
Unit V
mA mW C
K/W
Dec-07-2001
SIEGET 45 BFP520F
Electrical Characteristics at TA = 25C, unless otherwise specified. Symbol Values Parameter min. DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 20 mA, VCE = 2 V V(BR)CEO ICBO IEBO hFE 2.5 70 3 110 3.5 200 35 200 V nA A typ. max.
AC characteristics (verified by random sampling) Transition frequency fT IC = 30 mA, VCE = 2 V, f = 2 GHz Collector-base capacitance Ccb VCB = 2 V, f = 1 MHz Collector-emitter capacitance Cce VCE = 2 V, f = 1 MHz Emitter-base capacitance Ceb VEB = 0.5 V, f = 1 MHz Noise figure F IC = 2 mA, VCE = 2 V, ZS = ZSopt , f = 1.8 GHz Gms Power gain, maximum stable 1) IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Insertion power gain |S21|2 IC = 20 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZL = 50 IP3 Third order intercept point at output2) VCE = 2 V, f = 1.8 GHz, ZS =ZL =50, IC = 20 mA P-1dB 1dB compression point3) VCE = 2 V, f = 1.8 GHz, ZS =ZL =50, IC = 20 mA
-
45 0.07 0.25 0.31 0.95
-
23
-
20.5
-
23.5
-
10.5
1G ms = |S21 / S12 | 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1MHz to 6GHz. 3DC current at no input power
2
Unit
-
GHz pF
dB
-
-
dB
-
dBm
-
Dec-07-2001
SIEGET 45 BFP520F
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data
IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI =
15 25 2 2 2 7.5 235 1.7 0.7 0.661 50 0.333 0.035
aA V V fF ps mA V ns -
BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC =
235 0.4 1.5 0.01 11 0.6 0.958 10 50 0.236 0 -0.25 0.5
A A
NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM
V deg fF -
0.335 5 93 1 0.75 1.11 298
V V
fF
eV K
Package Equivalent Circuit:
LBO = LEO = LCO =
0.22 0.28 0.22
nH nH nH fF fF fF
LBI = RLBI = LEI = RLEI = LCI = RLCI = KCI-EI = KBI-CI = KBI-EI =
0.42 0.15 0.26 0.11 0.35 0.13 -0.05 -0.08 0.20
nH nH -
KBO-CO = 0.01 KEO-CO = 0.11 CBE = CBC = CCE = 34 2 33
Valid up to 6GHz
The TSFP-4 package has two emitter leads. To avoid high complexity of the package equivalent circuit, both leads are combined in one electrical connection. RLxI are series resistors for the inductances LxI and Kxa-yb are the coupling coefficients between the inductances Lxa and Lyb. The referencepins for the coupled ports are B, E, C, B, E, C. For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes
3
Dec-07-2001
KBO-EO = 0.10

-
1 25 1 20 7.6
fA fA A
nH

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